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PD- 91788
IRG4PF50WD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Optimized for use in Welding and Switch-Mode Power Supply applications * Industry benchmark switching losses improve efficiency of all power supply topologies * 50% reduction of Eoff parameter * Low IGBT conduction losses * Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-247AC package
C
VCES = 900V
G E
VCE(on) typ. = 2.25V
@VGE = 15V, IC = 28A
n-cha n ne l
Benefits
* Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz * HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
900 51 28 204 204 16 204 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m)
Units
V A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.24 --- 6 (0.21)
Max.
0.64 0.83 --- 40 ---
Units
C/W
g (oz)
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1
IRG4PF50WD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current
VFM IGES
Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. 900 -- -- -- -- 3.0 -- 26 -- -- -- -- -- --
Typ. -- 0.295 2.25 2.74 2.12 -- -13 39 -- -- -- 2.5 2.1 --
Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 3.5mA 2.7 IC = 28A VGE = 15V -- V IC = 60A See Fig. 2, 5 -- IC = 28A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 50V, IC = 28A 500 A VGE = 0V, VCE = 900V 2.0 VGE = 0V, VCE = 10V, TJ = 25C 6.5 mA VGE = 0V, VCE = 900V, TJ = 150C 3.5 V IC = 16A See Fig. 13 3.0 IC = 16A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 160 19 53 71 50 150 110 2.63 1.34 3.97 69 52 270 190 6.0 13 3300 200 45 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 240 IC = 28A 29 nC VCC = 400V See Fig. 8 80 VGE = 15V -- TJ = 25C -- ns IC = 28A, VCC = 720V 220 VGE = 15V, RG = 5.0 170 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 18 5.3 -- TJ = 150C, See Fig. 11, 18 -- ns IC = 28A, VCC = 720V -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 135 ns TJ = 25C See Fig. 245 TJ = 125C 14 IF = 16A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 VR = 200V 675 nC TJ = 25C See Fig. 1838 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17
2
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IRG4PF50WD
40
F or b oth:
LOAD CURRENT (A)
30
D uty c y c le : 50% T J = 12 5 C T sink = 90 C G a te d riv e a s s pe c ified
P ow er D is s ipation = 40 W S q u a re w a v e :
20
60% of rated voltage
I
10
Id e a l d io d es
0 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
I C , Collector-to-Emitter Current (A)
TJ = 25 C TJ = 150 C
100
I C , Collector-to-Emitter Current (A)
100
TJ = 150 C
TJ = 25 C
10
10
1 1
V GE = 15V 20s PULSE WIDTH
10
1 5 6 7
V CC = 50V 5s PULSE WIDTH
8 9 10
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3
IRG4PF50WD
60 3.0
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH
Maximum DC Collector Current(A)
IC = 56 A
50
40
2.5
30
IC = 28 A
20
2.0
IC = 14 A
10
0 25 50 75 100 125 150
1.5 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature C) (
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J
0.001 0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PF50WD
6000
5000
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 28A
16
C, Capacitance (pF)
4000
Cies
12
3000
8
2000
C oes Cres
4
1000
0 1 10 100
0 0 40 80 120 160
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
6.0
100
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC V GE TJ 5.5 I C
= 720V = 15V = 25 C = 28A
RG = 5.0 VGE = 15V VCC = 720V
5.0
IC = 56 A
10
4.5
IC = 28 A
IC = 14 A
4.0
3.5 0 10 20 30 40 50
1 -60 -40 -20
0
20
40
60
80 100 120 140 160
( RG , Gate Resistance )
TJ , Junction Temperature C ) (
Fig. 9 - Typical Switching Losses vs. Gate Resistance
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Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4PF50WD
16
Total Switching Losses (mJ)
12
8
I C , Collector Current (A)
RG TJ VCC VGE
= 5.0 = 150 C = 720V = 15V
1000
VGE = 20V T J = 125 oC
100
10
4
0 10 20 30 40 50 60
SAFE OPERATING AREA
1 1 10 100 1000
I C , Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )
T J = 150C
10
T J = 125C T J = 25C
1 0.0 1.0 2.0 3.0 4.0 5.0 6.0
F o rw a rd V o lta g e D ro p - V FM (V )
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4PF50WD
300 40
VR = 20 0V T J = 125C T J = 25C
30 200
VR = 2 00V T J = 125 C T J = 25C
I F = 16A I F = 8.0A
I R R M - (A )
I F = 32A
trr - (n s)
20
I F = 32A I F = 16A I F = 8.0A
100 10
0 100
di f /dt - (A / s)
1000
0 100
di f /d t - (A / s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1200
Fig. 15 - Typical Recovery Current vs. dif/dt
1000
VR = 200 V T J = 125C T J = 25C
900
VR = 20 0V T J = 12 5C T J = 25 C
600
I F = 16A
di(rec )M /dt - (A / s )
I F = 32A
Q R R - (nC )
100
I F = 32 A I F =1 6A I F = 8 .0A
I F = 8.0A
300
0 100
di f /d t - (A / s)
1000
10 100
1000
di f /dt - (A / s)
Fig. 16 - Typical Stored Charge vs. dif/dt
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Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4PF50WD
Same type device as D .U.T.
80% of Vce
430F D .U .T.
90%
Vge
VC
10% 90%
t d(off)
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
10% IC 5%
t d(on)
tr
tf t=5s E on E ts = (Eon +Eoff ) Eoff
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O LT A G E D .U .T . 10% + V g +V g
trr Ic
Q rr =
trr id dt Ic dt tx
tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic
10% Irr Vcc
V pk Irr
Vcc
D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4
E rec =
t4 V d idIc dt Vd dt t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr 8
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr www.irf.com
IRG4PF50WD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O LT A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 600 0 F 100 V Vc*
D.U.T.
R L= 0 - 720V
720V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4PF50WD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
Case Outline and Dimensions -- TO-247AC
3.6 5 (.14 3) 3.5 5 (.14 0) 0.2 5 (.0 1 0) M D B M
-A5.5 0 (.2 17)
-D-
15 .90 (.62 6 ) 15 .30 (.60 2 ) -B-
5.3 0 (.20 9) 4.7 0 (.18 5) 2.5 0 (.0 89) 1.5 0 (.0 59) 4
N O TE S : 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 982 . 2 C O N T R O L LIN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -24 7A C .
2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 1
2X
5.5 0 (.2 17) 4.5 0 (.1 77)
2
3
-C-
LEAD 1234-
A S S IG N M E N T S GATE CO LLECT O R E M IT T E R CO LLECT O R
*
1 4 .8 0 (.5 8 3) 1 4 .2 0 (.5 5 9)
4.3 0 (.1 70) 3.7 0 (.1 45)
0 .80 (.03 1 ) 0 .40 (.01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 )
*
3X C AS
2 .40 (.09 4 ) 2 .00 (.07 9 ) 2X 5.4 5 (.21 5)
L O N G E R L E A D E D (20m m ) V E R S IO N A V A ILA B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER
3X
1.4 0 (.0 56) 1.0 0 (.0 39) 0.2 5 (.0 10) M
2X
3 .40 (.13 3) 3 .00 (.11 8)
CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)
D im en sio ns in M illim e ters a n d (Inche s)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 7/98
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